Electron - ion recombination data for plasma applications
نویسنده
چکیده
This thesis contains results of electron-ion recombination processes in atomic ions relevant for plasma applications. The measurements were performed at the Stockholm Refrigerated Electron Beam Ion Trap (R-EBIT) and at the CRYRING heavy-ion storage ring. Dielectronic recombination (DR) cross sections, resonant strengths, rate coefficients and energy peak positions in H-like and He-like S are obtained for the first time from the EBIT measurements. Furthermore, the experimentally obtained DR resonant strengths are used to check the behaviour of a scaling formula for low Z, H-and He-like iso-electronic sequences and to update the fitting parameters. KLL DR peak positions for initially He-to B-like Ar ions are obtained experimentally from the EBIT measurements. Both the results from highly charged sulfur and argon are compared with the calculations performed with a distorted wave approximation. Absolute recombination rate coefficients of B-like C, B-like Ne and Belike F ions are obtained for the first time with high energy resolution from storage ring measurements. The experimental results are compared with the intermediate coupling AUTOSTRUCTURE calculations. Plasma rate coefficients of each of these ions are obtained by convoluting the energy dependent recombination spectra’s with a Maxwell-Boltzmann energy distribution in the temperature range of 103-106 K. The resulting plasma rate coefficients are presented and compared with the calculated data available in literature.
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